2N7637-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 650V 7A TO257
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The 2N7637-GA from GeneSiC Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to GeneSiC Semiconductor's 2N7637-GA for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 170mOhm @ 7A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 35 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-257
- Package / Case: TO-257-3
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