2PB709AQ,115
NXP USA Inc.
NXP USA Inc.
TRANS PNP 45V 0.1A SMT3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2PB709AQ,115 Bipolar Junction Transistor (BJT) by NXP USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2PB709AQ,115 provides consistent performance in demanding applications. Choose NXP USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
Related Products
Diodes Incorporated
APT13003HU-G1
onsemi
2SA1471R
Panasonic Electronic Components
2SC559200L
Sanken
2SD1785
onsemi
BC490AG
onsemi
BD441
NXP USA Inc.
BC557B,116
Panasonic Electronic Components
DSC5002S0L
onsemi
BC557BTFR
Rohm Semiconductor