2SA1008(4)-S6-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR, PNP
$0.97
Available to order
Reference Price (USD)
1+
$0.97000
500+
$0.9603
1000+
$0.9506
1500+
$0.9409
2000+
$0.9312
2500+
$0.9215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SA1008(4)-S6-AZ Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SA1008(4)-S6-AZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Renesas Electronics America Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Sanyo
2SA1688-5-TL-E
Microchip Technology
2C3500
onsemi
2SB1144S
Micro Commercial Co
MMS8550HE3-H-TP
Rohm Semiconductor
2SCR564F3TR
Microchip Technology
JANSM2N3019
Central Semiconductor Corp
CZT5551 BK PBFREE
Microchip Technology
JAN2N3421S
Central Semiconductor Corp
2N5194 TIN/LEAD
Microchip Technology