2SA1312-BL(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 120V 0.1A SMINI
$0.32
Available to order
Reference Price (USD)
3,000+
$0.06300
6,000+
$0.05670
15,000+
$0.05040
30,000+
$0.04725
75,000+
$0.04200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SA1312-BL(TE85L,F Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SA1312-BL(TE85L,F is a reliable component for demanding applications. Toshiba Semiconductor and Storage's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
Nexperia USA Inc.
BCX70G,215
Diodes Incorporated
MMBT2907A-7-F
onsemi
FJP13009H2TU
onsemi
BC547CTA
Diotec Semiconductor
BC849B
Diodes Incorporated
ZX5T1951GQTA
NTE Electronics, Inc
BC558
Diodes Incorporated
MMBT3904FA-7B
Micro Commercial Co
2N3904-AP
Diodes Incorporated