2SA1680,T6SCMDF(J
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 2A TO92MOD
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The 2SA1680,T6SCMDF(J Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SA1680,T6SCMDF(J provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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