2SA1837(F,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 230V 1A TO220NIS
$0.00
Available to order
Reference Price (USD)
1+
$0.76000
10+
$0.66200
25+
$0.58600
100+
$0.51030
250+
$0.44416
500+
$0.37800
1,000+
$0.30240
2,500+
$0.27405
5,000+
$0.25515
Exquisite packaging
Discount
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The 2SA1837(F,M) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SA1837(F,M) provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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