2SA1837,HFEYHF(M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 230V 1A TO220NIS
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Enhance your circuit designs with the 2SA1837,HFEYHF(M Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SA1837,HFEYHF(M is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Toshiba Semiconductor and Storage to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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