2SA1871-T1-AZ
Renesas
Renesas
2SA1871-T1-AZ - PNP SILICON TRIP
$0.74
Available to order
Reference Price (USD)
1+
$0.74318
500+
$0.7357482
1000+
$0.7283164
1500+
$0.7208846
2000+
$0.7134528
2500+
$0.706021
Exquisite packaging
Discount
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Experience unmatched performance with the 2SA1871-T1-AZ Bipolar Junction Transistor (BJT) by Renesas. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SA1871-T1-AZ delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MP-2