2SA812B-T1B-AT
Renesas
Renesas
2SA812B-T1B-AT - PNP SILICON EPI
$0.07
Available to order
Reference Price (USD)
1+
$0.06718
500+
$0.0665082
1000+
$0.0658364
1500+
$0.0651646
2000+
$0.0644928
2500+
$0.063821
Exquisite packaging
Discount
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Experience unmatched performance with the 2SA812B-T1B-AT Bipolar Junction Transistor (BJT) by Renesas. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SA812B-T1B-AT delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-MINIMOLD
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