2SA949-Y(T6SHRP,FM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 150V 0.05A TO92MOD
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The 2SA949-Y(T6SHRP,FM Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SA949-Y(T6SHRP,FM provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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