2SB1189T100Q
Rohm Semiconductor

Rohm Semiconductor
TRANS PNP 80V 0.7A MPT3
$0.00
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Reference Price (USD)
1,000+
$0.20740
Exquisite packaging
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Experience unmatched performance with the 2SB1189T100Q Bipolar Junction Transistor (BJT) by Rohm Semiconductor. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SB1189T100Q delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Rohm Semiconductor for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3