2SB1189T100R
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 80V 0.7A MPT3
$0.65
Available to order
Reference Price (USD)
1,000+
$0.20740
Exquisite packaging
Discount
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The 2SB1189T100R Bipolar Junction Transistor (BJT) by Rohm Semiconductor is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SB1189T100R provides consistent performance in demanding applications. Choose Rohm Semiconductor for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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