2SB1261(1)-AZ
Renesas
Renesas
2SB1261 - PNP SILICON EPITAXIAL
$0.77
Available to order
Reference Price (USD)
1+
$0.77209
500+
$0.7643691
1000+
$0.7566482
1500+
$0.7489273
2000+
$0.7412064
2500+
$0.7334855
Exquisite packaging
Discount
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Experience unmatched performance with the 2SB1261(1)-AZ Bipolar Junction Transistor (BJT) by Renesas. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SB1261(1)-AZ delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 600mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (MP-3Z)
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