2SB1308T100Q
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 20V 3A MPT3
$0.00
Available to order
Reference Price (USD)
1,000+
$0.28000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SB1308T100Q Bipolar Junction Transistor (BJT) from Rohm Semiconductor is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SB1308T100Q is a reliable component for demanding applications. Rohm Semiconductor's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
Related Products
onsemi
2N5401_J05Z
Diodes Incorporated
ZXTBM322TA
onsemi
2N3390_D75Z
Micro Commercial Co
TIP41B-BP
onsemi
MPSA55_D26Z
Micro Commercial Co
2SC2001-L-AP
onsemi
MMBT4403-ON
Panasonic Electronic Components
2SD256500A
onsemi
KSD1944TU
onsemi