2SB1391-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR, PNP
$1.33
Available to order
Reference Price (USD)
1+
$1.33000
500+
$1.3167
1000+
$1.3034
1500+
$1.2901
2000+
$1.2768
2500+
$1.2635
Exquisite packaging
Discount
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Experience unmatched performance with the 2SB1391-E Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SB1391-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas Electronics America Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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