2SB817C-1E
onsemi
onsemi
TRANS PNP 140V 12A TO3P-3L
$0.00
Available to order
Reference Price (USD)
1+
$2.84000
30+
$2.40700
120+
$2.08617
510+
$1.77594
1,020+
$1.49778
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SB817C-1E Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SB817C-1E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 120 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P-3L
Related Products
Micro Commercial Co
BD438-BP
Panasonic Electronic Components
2SB12210QA
onsemi
BDW46
Renesas Electronics America Inc
2SC3478-A
onsemi
KSA709CGTA
Renesas Electronics America Inc
2SA1611(0)-T2-A
Panasonic Electronic Components
2SD1820A0L
Fairchild Semiconductor
FJL6825ATU
Nexperia USA Inc.
BF723/ZLX
onsemi