2SC2859-GR(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 30V 0.5A SMINI
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Optimize your electronic systems with the 2SC2859-GR(TE85L,F Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SC2859-GR(TE85L,F delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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