2SC2859-O(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 30V 0.5A SMINI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC2859-O(TE85L,F) Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SC2859-O(TE85L,F) is a reliable component for demanding applications. Toshiba Semiconductor and Storage's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
onsemi
MPS8098_D74Z
Micro Commercial Co
2SD1815-R-TP
Micro Commercial Co
TIP42-BP
Infineon Technologies
BC 817K-25W E6433
onsemi
BD680A
onsemi
FSB6726
onsemi
2SD1618S-TD-E
Nexperia USA Inc.
PMBTA06-QVL
Nexperia USA Inc.
BC857-QR
Panasonic Electronic Components