2SC3324GRTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 0.1A TO236
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08883
6,000+
$0.08390
15,000+
$0.07649
30,000+
$0.07156
75,000+
$0.06580
Exquisite packaging
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Discover the 2SC3324GRTE85LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SC3324GRTE85LF is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Toshiba Semiconductor and Storage for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
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