2SC3380ASTR-E
Renesas
Renesas
2SC3380ASTR - SILICON NPN TRIPLE
$0.30
Available to order
Reference Price (USD)
1+
$0.30420
500+
$0.301158
1000+
$0.298116
1500+
$0.295074
2000+
$0.292032
2500+
$0.28899
Exquisite packaging
Discount
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The 2SC3380ASTR-E by Renesas is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2SC3380ASTR-E ensures efficient and stable operation. Backed by Renesas's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V
- Power - Max: 1 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: UPAK
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