2SC5200-O(S1,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR TO-3PL PC=
$2.62
Available to order
Reference Price (USD)
1+
$2.62360
500+
$2.597364
1000+
$2.571128
1500+
$2.544892
2000+
$2.518656
2500+
$2.49242
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC5200-O(S1,F Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SC5200-O(S1,F is a reliable component for demanding applications. Toshiba Semiconductor and Storage's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
JAN2N3636UB
Microchip Technology
2N656S
onsemi
2SC3135T-SPA
onsemi
2SD2223-E
Microchip Technology
MNS2N2222AUB/TR
Microchip Technology
2N5968
onsemi
PCP1204-TD-H
Sanyo
2SD1907R-MD16-E
Microchip Technology
2N5469
onsemi