2SC5200N(S1,E,S)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 230V 15A TO3P
$2.27
Available to order
Reference Price (USD)
1+
$2.37000
10+
$2.13700
25+
$1.90840
100+
$1.71750
250+
$1.52672
500+
$1.33586
1,000+
$1.10686
2,500+
$1.03052
5,000+
$1.01780
Exquisite packaging
Discount
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Optimize your electronic systems with the 2SC5200N(S1,E,S) Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SC5200N(S1,E,S) delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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