2SC5706-P-E
onsemi
onsemi
TRANS NPN 100V 5A TP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC5706-P-E Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SC5706-P-E provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 800 mW
- Frequency - Transition: 400MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
Related Products
Panasonic Electronic Components
2SD15110RL
onsemi
BC309BTA
onsemi
FGA6540WDF
NXP USA Inc.
PMBT4403/MIGVL
Bourns Inc.
TIP31E-S
onsemi
BUB323ZT4
Diodes Incorporated
ZTX853STOB
Infineon Technologies
BFN24E6327
Micro Commercial Co
2SA1797-P-AP
Nexperia USA Inc.