2SC5707-E
onsemi
onsemi
TRANS NPN 50V 8A TP
$0.00
Available to order
Reference Price (USD)
1+
$0.79000
10+
$0.69800
100+
$0.53890
500+
$0.42968
1,000+
$0.34728
Exquisite packaging
Discount
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The 2SC5707-E from onsemi is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SC5707-E is a reliable choice for both commercial and industrial use. Trust onsemi to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 330MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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