2SC5712(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 3A PW-MINI
$0.18
Available to order
Reference Price (USD)
1+
$0.18020
500+
$0.178398
1000+
$0.176596
1500+
$0.174794
2000+
$0.172992
2500+
$0.17119
Exquisite packaging
Discount
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The 2SC5712(TE12L,F) Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SC5712(TE12L,F) is a reliable component for demanding applications. Toshiba Semiconductor and Storage's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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