2SC6095-TD-E
onsemi
onsemi
TRANS NPN 80V 2.5A PCP
$0.66
Available to order
Reference Price (USD)
1,000+
$0.24990
2,000+
$0.22785
5,000+
$0.21315
10,000+
$0.19845
25,000+
$0.19600
Exquisite packaging
Discount
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The 2SC6095-TD-E Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SC6095-TD-E provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
- Power - Max: 1.3 W
- Frequency - Transition: 350MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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