2SCR512RHZGTL
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 30V 2A TSMT3
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
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Enhance your circuit designs with the 2SCR512RHZGTL Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SCR512RHZGTL is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 320MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: TSMT3
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