2SD1163A-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR NPN
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2SD1163A-E Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SD1163A-E delivers superior performance in diverse environments. Renesas Electronics America Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
FZT458TA
onsemi
2N3904RLRAH
Diodes Incorporated
ZUMT720TA
NXP USA Inc.
PMEM1505PG,115
Micro Commercial Co
TIP32A-BP
Diodes Incorporated
MMST4126-7
Infineon Technologies
IPP80CN10NGXKSA1
onsemi
SMMUN2233LT1
Diodes Incorporated
DPLS4140E-13
Microchip Technology