2SD2206A(T6SEP,F,M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 2A TO92MOD
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Optimize your electronic systems with the 2SD2206A(T6SEP,F,M Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SD2206A(T6SEP,F,M delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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