2SD734F
onsemi
onsemi
NPN EPITAXIAL PLANAR SILICON TRA
$0.12
Available to order
Reference Price (USD)
1+
$0.12480
500+
$0.123552
1000+
$0.122304
1500+
$0.121056
2000+
$0.119808
2500+
$0.11856
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2SD734F Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SD734F is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
Related Products
Microchip Technology
2N5429
onsemi
2SD1624T-C-TD-E
Microchip Technology
2N3635UB/TR
Microchip Technology
2N3765U4
Toshiba Semiconductor and Storage
TTC014,L1NV
Microchip Technology
2N2946AUB
Renesas Electronics America Inc
2SC3568(2)-S6-AZ
Microchip Technology
2N5665
Microchip Technology
JANSF2N2221AUBC
Microchip Technology