2SJ438(AISIN,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH TO220NIS
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 2SJ438(AISIN,Q,M) by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2SJ438(AISIN,Q,M) is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220NIS
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IRF1010NL
Infineon Technologies
64-2096PBF
Infineon Technologies
BSP298 E6327
Infineon Technologies
SI3443DVTRPBF
IXYS
IXTH06N220P3HV
Toshiba Semiconductor and Storage
2SK2962,T6WNLF(J
Diodes Incorporated
ZXMN3A02X8TC
Infineon Technologies
IRLB3036GPBF
Fairchild Semiconductor
FDU8896_NL
Diodes Incorporated