2SJ529L06-E
Renesas
Renesas
2SJ529L06 - P-CHANNEL POWER MOSF
$0.94
Available to order
Reference Price (USD)
1+
$0.94088
500+
$0.9314712
1000+
$0.9220624
1500+
$0.9126536
2000+
$0.9032448
2500+
$0.893836
Exquisite packaging
Discount
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Upgrade your designs with the 2SJ529L06-E by Renesas, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2SJ529L06-E is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: DPAK(L)-(2)
- Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
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