2SJ649-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 20A TO220
$0.00
Available to order
Reference Price (USD)
1+
$1.74000
25+
$1.40240
100+
$1.26230
500+
$0.98176
1,000+
$0.81345
2,500+
$0.78540
Exquisite packaging
Discount
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Meet the 2SJ649-AZ by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SJ649-AZ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Isolated Tab
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