2SJ656
onsemi
onsemi
MOSFET P-CH 100V 18A TO220ML
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2SJ656 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the 2SJ656 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ML
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPB70N04S3-07
Infineon Technologies
IRF7488TRPBF
onsemi
FQA85N06
IXYS
IXTC280N055T
onsemi
NDT03N40ZT3G
Infineon Technologies
IPB072N15N3GE8187ATMA1
Infineon Technologies
BSO119N03S
Infineon Technologies
BSP295E6327
Vishay Siliconix
IRF644STRL
IXYS