2SK1069-5-TL-E
onsemi
onsemi
LOW-FREQUENCY GENERAL-PURPOSE
$1.07
Available to order
Reference Price (USD)
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$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
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The 2SK1069-5-TL-E JFET by onsemi is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The 2SK1069-5-TL-E performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 20 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 150 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCPH
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