2SK1215IGETL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
RF N-CHANNEL MOSFET
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The 2SK1215IGETL-E is a high-efficiency RF MOSFET transistor by Renesas Electronics America Inc, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The 2SK1215IGETL-E's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Renesas Electronics America Inc's reputation for quality, you can trust the 2SK1215IGETL-E to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: 24dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: 3dB @ 1MHz
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 20 V
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-CMPAK
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