2SK1339-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 900V 3A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SK1339-E by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMN2027LK3-13
IXYS
IXFX32N50
IXYS
IXFV30N50P
Infineon Technologies
IPP80N06S2L-05
Infineon Technologies
IRFR13N15DTRL
Infineon Technologies
AUIRFL024N
onsemi
NTD4913NT4G
Renesas Electronics America Inc
RJK5012DPP-E0#T2
STMicroelectronics
STD12NF06LT4
Infineon Technologies