2SK2225-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 1500V 2A TO3PFM
$4.08
Available to order
Reference Price (USD)
1+
$4.07562
500+
$4.0348638
1000+
$3.9941076
1500+
$3.9533514
2000+
$3.9125952
2500+
$3.871839
Exquisite packaging
Discount
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Meet the 2SK2225-E by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SK2225-E stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 984.7 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFM
- Package / Case: TO-3PFM, SC-93-3
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