2SK2507(F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 50V 25A TO220NIS
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The 2SK2507(F) from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the 2SK2507(F) offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220NIS
- Package / Case: TO-220-3 Full Pack
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