2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 3A TO220SM
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SK2883(TE24L,Q) from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the 2SK2883(TE24L,Q) offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Sanken
GKI06185
Infineon Technologies
IRL2203NLPBF
Infineon Technologies
IRF7205PBF
Vishay Siliconix
IRLR024TR
Renesas Electronics America Inc
HAT2169H-EL-E
Infineon Technologies
IRFR220NTRR
Infineon Technologies
IRF7471TR
Infineon Technologies
IPB160N04S2L03ATMA2
Infineon Technologies
IRLH7134TRPBF
onsemi