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2SK3068(TE24L,Q)

Toshiba Semiconductor and Storage
2SK3068(TE24L,Q) Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12A TO220SM
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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