2SK3666-2-TB-E
Sanyo
Sanyo
N-CHANNEL JUNCTION SILICON FET F
$0.00
Available to order
Reference Price (USD)
6,000+
$0.07866
Exquisite packaging
Discount
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Discover the 2SK3666-2-TB-E from Sanyo, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the 2SK3666-2-TB-E ensures reliable performance in demanding environments. Upgrade your circuit designs with Sanyo's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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