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2SK3943-ZP-E1-AY

Renesas Electronics America Inc
2SK3943-ZP-E1-AY Preview
Renesas Electronics America Inc
MOSFET N-CH 40V 82A TO263
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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