2SK4017(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 5A PW-MOLD2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 2SK4017(Q) by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2SK4017(Q) is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PW-MOLD2
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Infineon Technologies
IPD90R1K2C3BTMA1
Renesas Electronics America Inc
RJK1557DPA-WS#J0
onsemi
HUF76419P3
IXYS
IXFK150N10
Vishay Siliconix
SI5445BDC-T1-E3
Vishay Siliconix
IRF644N
Infineon Technologies
IRLR3715Z
Diodes Incorporated
ZXMN10B08E6TC
STMicroelectronics
STP45NE06
NXP USA Inc.