3MN03SF-TL-E
onsemi
onsemi
BIP NPN 30MA 20V
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 3MN03SF-TL-E RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 320MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SSFP
Related Products
Infineon Technologies
BFR106E6327HTSA1
Infineon Technologies
BFP720FH6327XTSA1
NXP USA Inc.
BFU630F,115
NTE Electronics, Inc
NTE54MP
NXP USA Inc.
BFU530XVL
MACOM Technology Solutions
MRF393
onsemi
2SC6024-TL-E
NXP USA Inc.
PRF957,115
Panasonic Electronic Components
DSC9F0100L
onsemi