6116LA35TDB
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 24CDIP
$19.02
Available to order
Reference Price (USD)
300+
$12.75750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 6116LA35TDB Memory IC by Renesas Electronics America Inc is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the 6116LA35TDB, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The 6116LA35TDB features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the 6116LA35TDB include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The 6116LA35TDB is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Last Time Buy
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 24-CDIP (0.300", 7.62mm)
- Supplier Device Package: 24-CDIP
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