64-0055PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 160A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the 64-0055PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 64-0055PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: -
Related Products
NXP USA Inc.
BUK7506-55A127
Microsemi Corporation
JANTXV2N6782
Comchip Technology
CMS16P06D-HF
Infineon Technologies
IPD90N06S4-07ATMA2
Panjit International Inc.
PJF2NA60_T0_00001
Microsemi Corporation
2N7225U
Diodes Incorporated
DMJ70H1D4SV3
IXYS
FMD80-0045PS
Central Semiconductor Corp
CTLM8110-M832D TR
Microsemi Corporation