70T633S10BCI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 256CABGA
$304.06
Available to order
Reference Price (USD)
12+
$176.10583
Exquisite packaging
Discount
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Optimize your electronic designs with the 70T633S10BCI Memory IC from Renesas Electronics America Inc, a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The 70T633S10BCI embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The 70T633S10BCI excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The 70T633S10BCI is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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