70T659S10BFI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 208CABGA
$233.90
Available to order
Reference Price (USD)
14+
$135.46214
Exquisite packaging
Discount
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Upgrade your systems with the 70T659S10BFI Memory IC from Renesas Electronics America Inc, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The 70T659S10BFI showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The 70T659S10BFI excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The 70T659S10BFI is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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