70V3579S4DR
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 1.125MBIT PAR 208PQFP
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The 70V3579S4DR by Renesas Electronics America Inc is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the 70V3579S4DR are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The 70V3579S4DR stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The 70V3579S4DR finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the 70V3579S4DR a preferred Memory IC for diverse uses.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (32K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 4.2 ns
- Voltage - Supply: 3.15V ~ 3.45V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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